| 1.1 | Virial theorem | 102 |
| 1.2 | Atomic mass and molar fractions | 103 |
| 1.3 | The covalent bond | 103 |
| 1.4 | Ionic bonding and CsCl | 104 |
| 1.5 | Madleung constant | 104 |
| 1.6 | Bonding and bulk modulus | 104 |
| 1.7 | Van der Waals bonding | 105 |
| 1.8 | Kinetic molecular theory | 105 |
| 1.9 | Kinetic molecular theory | 105 |
| 1.10 | Kinetic molecular theory and Ar-ion laser | 105 |
| 1.11 | Vacuum deposition | 106 |
| 1.12 | Heat capacity | 107 |
| 1.13 | Dulong-petit atomic heat capacity | 107 |
| 1.14 | Dulong-petit specific heat capacity of alloys and compounds | 107 |
| 1.15 | Thermal expansion | 108 |
| 1.16 | Thermal expansion of Si | 108 |
| 1.17 | Thermal expansion of GaP and GaAs | 108 |
| 1.18 | Electrical noise | 108 |
| 1.19 | Thermal activation | 109 |
| 1.20 | Diffusion in Si | 109 |
| 1.21 | Diffusion in SiO2 | 109 |
| 1.22 | BCC and FCC crystals | 109 |
| 1.23 | BCC and FCC crystals | 109 |
| 1.24 | Planar and surface concentrations | 109 |
| 1.25 | Diamond and zinc blende | 109 |
| 1.26 | Zinc blende, NaCl, and CsCl | 109 |
| 1.27 | Crystallographic directions and planes | 110 |
| 1.28 | Si and SiO2 | 110 |
| 1.29 | Vacancies in metals | 110 |
| 1.30 | Vacancies in silicon | 111 |
| 1.31 | Pb-Sn solder | 111 |
| 1.32 | Pb-Sn solder | 111 |
| 2.1 | Electrical conduction | 180 |
| 2.2 | Electrical conduction | 180 |
| 2.3 | Conduction in gold | 181 |
| 2.4 | Effective number of conduction electrons per atom | 181 |
| 2.5 | TCR and Matthiessen's rule | 181 |
| 2.6 | TCR of isomorphous alloys | 182 |
| 2.7 | Resistivity of isomorphous alloys and nordheim's rule | 182 |
| 2.8 | Nordheim's rule and brass | 182 |
| 2.9 | Resistvity of solid solution metal allys: testing nordheim's rule | 182 |
| 2.10 | TCR and alloy resistivity | 183 |
| 2.11 | Electrical and thermal conductivity of In | 183 |
| 2.12 | Electrical and thermal conductivity of Ag | 183 |
| 2.13 | Mixture rules | 184 |
| 2.14 | Mixture rules | 184 |
| 2.15 | Ag-Ni alloys (contact materials) and the mixture rules | 184 |
| 2.16 | Ag-W alloys (contact materials) and the mixture rule | 184 |
| 2.17 | Thermal conduction | 185 |
| 2.18 | Thermal resistance | 185 |
| 2.19 | Thermal resistance | 185 |
| 2.20 | The Hall effect | 185 |
| 2.21 | The strain gauge | 186 |
| 2.22 | Thermal coefficients of expansion and resistivity | 187 |
| 2.23 | Temperature of a light bulb filament | 187 |
| 2.24 | Einstein relation and ionic conductivity | 188 |
| 2.25 | Skin effect | 188 |
| 2.26 | Thin films | 188 |
| 2.27 | Interconnects | 188 |
| 2.28 | Thin 50 nm interconnects | 188 |
| 2.29 | TCR of thin films | 189 |
| 2.30 | Electromigration | 189 |
| 3.1 | Photons and photon flux | 272 |
| 3.2 | Yellow, cyan, magenta, and white | 272 |
| 3.3 | Brightness of laser pointers | 273 |
| 3.4 | Human eye | 273 |
| 3.5 | X-ray photons | 275 |
| 3.6 | X-rays, exposure, and roentgens | 275 |
| 3.7 | Photoelectric effect | 276 |
| 3.8 | Photoelectric effect and quantum efficiency | 276 |
| 3.9 | Photoelectric effect | 276 |
| 3.10 | Planck's law and photon energy distribution of radiation | 277 |
| 3.11 | Wien's law | 277 |
| 3.12 | Diffraction by X-rays and an electron beam | 277 |
| 3.13 | Heisenberg's uncertainity principle | 277 |
| 3.14 | Heisenberg's uncertainity principle | 277 |
| 3.15 | Tunneling | 278 |
| 3.16 | Electron impact excitation | 278 |
| 3.17 | Line spectra of hydrogenic atoms | 278 |
| 3.18 | Inozation energy and effective Z | 278 |
| 3.19 | Atomic and ionic radii | 278 |
| 3.20 | X-rays and the Moseley relation | 279 |
| 3.21 | The He atom | 280 |
| 3.22 | Excitation energy of He | 280 |
| 3.23 | Electron affinity | 280 |
| 3.24 | Electron spin resonance (ESR) | 280 |
| 3.25 | Spin-orbit coupling | 280 |
| 3.26 | Hund's rule | 281 |
| 3.27 | Hund's rule | 281 |
| 3.28 | The HeNe laser | 281 |
| 3.29 | Er3+-doped fiber amplifier | 282 |
| 4.1 | Phase of an atomic orbital | 365 |
| 4.2 | Molecular orbitals and atomic orbitals | 365 |
| 4.3 | Diamond and tin | 365 |
| 4.4 | Compound III-V Semiconductors | 366 |
| 4.5 | Compound II-V Semiconductors | 366 |
| 4.6 | Density of states for a two-dimensional electron gas | 366 |
| 4.7 | Fermi energy of Cu | 366 |
| 4.8 | Free electron model, Fermi energy, and density of states | 366 |
| 4.9 | Fermi energy and electron concentration | 366 |
| 4.10 | Temperature dependence of the Fermi level | 367 |
| 4.11 | X-ray emission spectrum from sodium | 367 |
| 4.12 | Conductivity of metals in the free electron model | 367 |
| 4.13 | Mean free path of conduction electrons in a metal | 367 |
| 4.14 | Low-temperature heat capacity of metals | 368 |
| 4.15 | Secondary emission and photomultiplier tubes | 368 |
| 4.16 | Thermoelectric effect and E F | 369 |
| 4.17 | The thermocouple equation | 369 |
| 4.18 | Thermionic emission | 369 |
| 4.19 | Field-assisted emission in MOS devices | 369 |
| 4.20 | CNTs and field emission | 370 |
| 4.21 | Nordheim-Fowler field emission in an FED | 370 |
| 4.22 | Lattice waves and heat capacity | 370 |
| 4.23 | Specific heat capacity of GaAs and InSb | 370 |
| 4.24 | Thermal conductivity | 370 |
| 4.25 | Overlapping bonds | 371 |
| 4.26 | Overlapping bonds at E F and higher resistivity | 371 |
| 4.27 | Gruneisen's law | 371 |
| 5.1 | Bandgap and photodetection | 464 |
| 5.2 | Intrinsic Ge | 464 |
| 5.3 | Fermi level in intrinsic semiconductors | 464 |
| 5.4 | Extrinisic Si | 464 |
| 5.5 | Extrinisic Si | 464 |
| 5.6 | Minimum conductivity | 464 |
| 5.7 | Extrinisic p-Si | 465 |
| 5.8 | Thermal velocity and mean free path in GaAs | 465 |
| 5.9 | Compensation doping in Si | 465 |
| 5.10 | Temperature dependence of conductivity | 465 |
| 5.11 | Ionization at low temperatures in doped semiconductors | 465 |
| 5.12 | Compensation doping in n-type Si | 466 |
| 5.13 | GaAs | 466 |
| 5.14 | Doped GaAs | 467 |
| 5.15 | Varshni equation and the change in the bandgap with temperature | 467 |
| 5.16 | Degenerate semiconductor | 467 |
| 5.17 | Photoconductivity and speed | 467 |
| 5.18 | Hall effect in semiconductors | 467 |
| 5.19 | Hall effect in semiconductors | 468 |
| 5.20 | Compound semiconductor devices | 468 |
| 5.21 | Excess minority carrier concentration | 468 |
| 5.22 | Direct recombination and GaAs | 469 |
| 5.23 | Piezoresistivity application to deflection and force measurement | 470 |
| 5.24 | Schottky junction | 470 |
| 5.25 | Schottky junction | 470 |
| 5.26 | Schottky and ohmic contacts | 470 |
| 5.27 | Peltier effect and electrical contacts | 471 |
| 5.28 | Peltier coolers and figure of merit (FOM) | 471 |
| 5.29 | Seebeck coefficient of semiconductors and thermal drift in semiconductor devices | 472 |
| 5.30 | Photogeneration and carrier kinetic energies | 473 |
| 6.1 | The pn junction | 573 |
| 6.2 | The Si pn junction | 573 |
| 6.3 | Junction capacitance of a pn junction | 573 |
| 6.4 | Temperature dependence of diode properties | 574 |
| 6.5 | Avalanche breakdown | 574 |
| 6.6 | Design of a pn junction diode | 574 |
| 6.7 | Minority carrier profiles (the hyperbolic functions) | 574 |
| 6.8 | The pnp bipolar transistor | 574 |
| 6.9 | Characteristics of an npn Si BJT | 575 |
| 6.10 | Bandgap narrowing and emitter injection efficiency | 576 |
| 6.11 | The JFET pinch-off voltage | 576 |
| 6.12 | The JFET | 577 |
| 6.13 | The JFET amplifier | 577 |
| 6.14 | The enhancement NMOSFET amplifier | 577 |
| 6.15 | Ultimate limits to device performance | 578 |
| 6.16 | Energy distribution of elecrons in the conduction band of a semiconductor and LED emission spectrum | 578 |
| 6.17 | LED output spectrum | 579 |
| 6.18 | LED output wavelength variations | 579 |
| 6.19 | Linewidth of direct recombination LEDs | 579 |
| 6.20 | AlGaAs LED emitter | 579 |
| 6.21 | Solar cell driving a load | 580 |
| 6.22 | Open circuit voltage | 580 |
| 6.23 | Maximum power from a solar cell | 580 |
| 6.24 | Series resistance | 581 |
| 6.25 | Shunt resistance | 581 |
| 6.26 | Series connected solar cells | 581 |
| 6.27 | A solar cell used in eskimo point | 581 |
| 7.1 | Relative permittivity and polarizability | 673 |
| 7.2 | Electronic polarization and SF6 | 673 |
| 7.3 | Electronic polarization in liquid xenon | 673 |
| 7.4 | Relative permittivity, bond strength, bandgap and refractive index | 673 |
| 7.5 | Dipolar liquids | 674 |
| 7.6 | Dielectric constant of water vapor or steam | 674 |
| 7.7 | Dipole moment in a nonuniform electric field | 674 |
| 7.8 | Ionic and electronic polarization | 675 |
| 7.9 | Electronic and inoic polarization in KCl | 675 |
| 7.10 | Debye relaxation | 675 |
| 7.11 | Debye and non-Debye relaxation and cole-cole plots | 675 |
| 7.12 | Equivalent circuit of a polyester capacitor | 675 |
| 7.13 | Student microwaves mashed potatoes | 676 |
| 7.14 | Dielectric loss per unit capacitance | 676 |
| 7.15 | Paralled and series equivalent circuits | 676 |
| 7.16 | Tantalum capacitors | 676 |
| 7.17 | Tantalum versus niobium oxide capacitors | 677 |
| 7.18 | TCC of a polyester capacitor | 677 |
| 7.19 | Dielectric breakdown of gases and Pashen curves | 677 |
| 7.20 | Capacitor design | 678 |
| 7.21 | Dielectric breakdown in a coaxial cable | 678 |
| 7.22 | Piezoelectricity | 679 |
| 7.23 | Piezoelectric voltage coefficient | 680 |
| 7.24 | Piezoelectricity and the piezoelectric bender | 680 |
| 7.25 | Piezoelectricity | 681 |
| 7.26 | Pyroelectric detectors | 681 |
| 7.27 | LiTaO3 pyroelectric detector | 681 |
| 7.28 | Pyroelectric detectors | 681 |
| 7.29 | Spark generator design | 683 |
| 7.30 | Ionic polarization resonance in CsCl | 683 |
| 7.31 | Low-k porous dielectrics for microelectronics | 683 |
| 8.1 | Inductance of a long solenoid | 763 |
| 8.2 | Magnetization | 764 |
| 8.3 | Paramagnetic and diamagnetic materials | 764 |
| 8.4 | Mass and molar susceptibilities | 764 |
| 8.5 | Pauli spin paramagnetism | 764 |
| 8.6 | Ferromagmetism and the exchange interaction | 764 |
| 8.7 | Magnetic domain wall energy and thickness | 764 |
| 8.8 | Toroidal inductor and radio engineers toroidal inductance equation | 765 |
| 8.9 | A toroidal inductor | 765 |
| 8.10 | The transformer | 766 |
| 8.11 | Losses in a magnetic recording head | 767 |
| 8.12 | Design of a ferrite antena for an AM receiver | 767 |
| 8.13 | A permanent magnet with an air gap | 767 |
| 8.14 | A permanent magnet with an air gap | 768 |
| 8.15 | Weight, cost, and energy of a permanent magnet with an air gap | 768 |
| 8.16 | Permanent magnet with yoke and air gap | 768 |
| 8.17 | Superconductivity and the critical current density | 769 |
| 8.18 | Magnetic pressure in a solenoid | 769 |
| 8.19 | Enterprising engineers in the high arctic building a superconducting inductor | 770 |
| 8.20 | Magnetic storage media | 770 |
| 8.21 | Magnetic recording principles | 770 |
| 9.1 | Refractive index and relative permittivity | 844 |
| 9.2 | Refractive index and bandgap | 845 |
| 9.3 | Temperature coefficient of refractive index | 845 |
| 9.4 | Sellmeier dispersion equation | 845 |
| 9.5 | Dispersion (n versus l) in GaAs | 845 |
| 9.6 | Cauchy dispersion equation | 845 |
| 9.7 | Cauchy dispersion relation for zinc selenide | 845 |
| 9.8 | Dispersion (n versus l) | 845 |
| 9.9 | Dispersion and diamond | 846 |
| 9.10 | Electric and magnetic fields in light | 846 |
| 9.11 | Reflection of light from a less dense medium (internal reflection) | 846 |
| 9.12 | Internal and external reflection at normal incidence | 846 |
| 9.13 | Antireflection coating | 846 |
| 9.14 | Optical fibers in communications | 847 |
| 9.15 | Optical fibers in communications | 847 |
| 9.16 | Complex refractive index | 847 |
| 9.17 | Complex refractive index | 847 |
| 9.18 | Free Carrier absorption in n -type Ge | 847 |
| 9.19 | Reststrahlen absorption in CdTe | 847 |
| 9.20 | Reststrahlen absorption in GaAs | 847 |
| 9.21 | Fundamental absorption | 847 |
| 9.22 | Quartz half-wave plate | 847 |
| 9.23 | Pockels cell modulator | 847 |
|
Web-Materials, Third Edition Website
Web-Materials Materials and Devices Website for Scientists and Engineers Serving scientists and engineers since 1996. Dedicated to continuing education. |
|