| 1.1 | Virial theorem and the bohr atom | 7 |
| 1.2 | Compositions in atomic and weight percentages | 9 |
| 1.3 | Ionic bonding and lattice energy | 17 |
| 1.4 | Energy of secondary bonding | 23 |
| 1.5 | Elastic modulus | 24 |
| 1.6 | Speed of sound in air | 30 |
| 1.7 | Specific heat capacity | 31 |
| 1.8 | Volume expansion coefficient | 35 |
| 1.9 | Expansion of Si | 36 |
| 1.10 | Mean and rms speeds of molecules | 39 |
| 1.11 | Noise in an RLC circuit | 44 |
| 1.12 | Diffusion of dopants in silicon | 49 |
| 1.13 | The copper (FCC) crystal | 55 |
| 1.14 | Miller indices and planar concentration | 60 |
| 1.15 | Vacancy concentration in aluminum | 67 |
| 1.16 | Vacancy concentration in a semiconductor | 67 |
| 1.17 | The 60% Pb-40% Sn alloy | 94 |
| 2.1 | Probability of scattering per unit time and the mean free time | 119 |
| 2.2 | Electron drift mobility in metals | 119 |
| 2.3 | Drift velocity and mean speed | 120 |
| 2.4 | Drift Velocity in a field | 120 |
| 2.5 | Temperature dependence of resistivity | 124 |
| 2.6 | Drift mobility and resistivity due to lattice vibration | 124 |
| 2.7 | Matthiessen's rule | 131 |
| 2.8 | Temperature coefficient of resistivity a and resisitivity index n | 132 |
| 2.9 | TCR at different reference temperatures | 133 |
| 2.10 | Temperature of the filamant of a light bulb | 133 |
| 2.11 | Nordheim's rule | 138 |
| 2.12 | Resistivity due to impurities | 138 |
| 2.13 | The resistivity-mixture rule | 141 |
| 2.14 | A component with dispersed air pores | 142 |
| 2.15 | Combined Nordheim and mixture rules | 142 |
| 2.16 | Hall-effect wattmeter | 147 |
| 2.17 | Hall mobility | 148 |
| 2.18 | Conduction electron concentration from the Hall effect | 148 |
| 2.19 | Thermal conductivity | 153 |
| 2.20 | Thermal resistance | 154 |
| 2.21 | Hall effect in semiconductors | 156 |
| 2.22 | Hall coefficient of intrinsic silicon | 158 |
| 2.23 | Conductivity of a soda-silicate glass | 160 |
| 2.24 | Drift mobility due to ionic conduction | 162 |
| 2.25 | Skin effect from dimensional analysis | 165 |
| 2.26 | Skin effect in an inductor | 166 |
| 2.27 | Thin-Film resistivity | 171 |
| 2.28 | Multilevel interconnect RC time constant | 175 |
| 3.1 | Energy of a blue photon | 198 |
| 3.2 | The photoelectric experiment | 199 |
| 3.3 | X-Ray photon energy and momentum | 201 |
| 3.4 | Stefan's law and the light bulb | 204 |
| 3.5 | The free electron | 211 |
| 3.6 | Wavelength of an electron beam | 211 |
| 3.7 | Electron confined within atomic dimensions | 216 |
| 3.8 | Energy of an apple in a crate | 216 |
| 3.9 | The measurement time and the frequency of waves: an analogy with DE Dt > h | 219 |
| 3.10 | The uncertainty principle on the atomic scale | 220 |
| 3.11 | The uncertainty principle with macroscopic objects | 220 |
| 3.12 | Tunneling conduction through metal-to-metal contacts | 226 |
| 3.13 | Significance of a small h | 227 |
| 3.14 | Number of states with the same energy | 230 |
| 3.15 | Probability density function/td> | 236 |
| 3.16 | The ionization energy of He+ | 240 |
| 3.17 | Inonization energy and effective Z | 240 |
| 3.18 | Excitation by electron-atom collisions in a gas discharge tube | 243 |
| 3.19 | The fraunhofer lines in the sun's spectrum | 244 |
| 3.20 | Giant atoms in space | 245 |
| 3.21 | Stern-Gerlach experiment and spin | 250 |
| 3.22 | The number of states at an energy level | 256 |
| 3.23 | Hund's rule | 258 |
| 3.24 | Efficiency of the HeNe laser | 264 |
| 3.25 | Doppler-broadened linewidth | 266 |
| 4.1 | Hydrogen halide molecule (HF) | 290 |
| 4.2 | Metallic liquid hydrogen in Jupiter and its magnetic field | 298 |
| 4.3 | What makes a metal? | 299 |
| 4.4 | Fermi speed of conduction electrons in a metal | 299 |
| 4.5 | Cutoff wavelength of a Si photodetector | 303 |
| 4.6 | X-ray emission and the density of states in a metal | 308 |
| 4.7 | Density of states in a band | 310 |
| 4.8 | Total number of states in a band | 311 |
| 4.9 | Mean speed of conduction electrons in a metal | 319 |
| 4.10 | Conduction in silver | 319 |
| 4.11 | The thermocouple EMF | 327 |
| 4.12 | The thermocouple equation | 327 |
| 4.13 | Vacuum tubes | 331 |
| 4.14 | Field emission | 337 |
| 4.15 | Specific heat capacity of Si | 346 |
| 4.16 | Specific heat capacity of GaAs | 346 |
| 4.17 | Lattice waves and sound velocity | 347 |
| 4.18 | Phonons in GaAs | 350 |
| 5.1 | Intrinsic concentration and conductivity of Si | 386 |
| 5.2 | Mean speed of electrons in the CB | 387 |
| 5.3 | Resistivity of intrinsic and doped Si | 392 |
| 5.4 | Compensation doping | 393 |
| 5.5 | The Fermi level in n- and p- type Si | 394 |
| 5.6 | Energy band diagram of an n-type semiconductor connected to a voltage supply | 395 |
| 5.7 | Saturation and intrinsic temperatures | 399 |
| 5.8 | Temperature dependence of the electron concentration | 400 |
| 5.9 | Compensation-doped Si | 405 |
| 5.10 | Photoresponse time | 413 |
| 5.11 | Photoconductivity | 414 |
| 5.12 | The Einstein relation | 420 |
| 5.13 | Diffusion coefficient of electrons in Si | 421 |
| 5.14 | Built-in potential due to doping variation | 421 |
| 5.15 | Infinitely long semiconductor illuminated at one end | 427 |
| 5.16 | Photoconductivity of a thin slab | 430 |
| 5.17 | Photogeneration in GaAs and thermalization | 430 |
| 5.18 | Piezoresistive strain gauge | 434 |
| 5.19 | The Schottky diode | 442 |
| 5.20 | The Peltier coefficient | 447 |
| 5.21 | Effective mass | 456 |
| 5.22 | Current due to a missing electron in the VB | 457 |
| 6.1 | The built-in potentials for Ge, Si, and GaAs pn junction | 479 |
| 6.2 | The p+n junction | 480 |
| 6.3 | Built-in voltage | 481 |
| 6.4 | Forward- and reverse-biased Si diode | 492 |
| 6.5 | The built-in voltage Vo from the energy band diagram | 498 |
| 6.6 | Incremental resistance and capacitance | 501 |
| 6.7 | Avalanche breakdown | 505 |
| 6.8 | A pnp transistor | 512 |
| 6.9 | Emitter injection efficiency g | 513 |
| 6.10 | A common base amplifier | 516 |
| 6.11 | CE low-frequency small-signal equivalent circuit | 521 |
| 6.12 | The JFET amplifier | 531 |
| 6.13 | The enhancement NMOSFET | 538 |
| 6.14 | Spectral linewidth of leds | 550 |
| 6.15 | A solar cell driving a resistive load | 558 |
| 6.16 | Open circuit voltage and illumination | 558 |
| 7.1 | Electronic polarizability | 588 |
| 7.2 | Electronic polarizability of a van der Waals solid | 594 |
| 7.3 | Electronic polarizability of covalent solids | 596 |
| 7.4 | Ionic and electronic polarizability | 602 |
| 7.5 | Dielectric loss per unit capacitance and the loss angle, d | 609 |
| 7.6 | Dielectric loss per unit capacitance and the loss angle, d | 610 |
| 7.7 | Dielectric loss and frequency | 611 |
| 7.8 | Nearly debye relaxation | 614 |
| 7.9 | Field inside a thin dielectric within a second dielectric | 618 |
| 7.10 | Gauss's law within a dielectric and free charges | 619 |
| 7.11 | Dielectric breakdown in a coaxial cable | 628 |
| 7.12 | Dielectric loss and equivalent circuit of a polyester capacitor at 1 kHz | 637 |
| 7.13 | Piezoelectric spark generator | 643 |
| 7.14 | The quartz crystal its equivalent circuit | 646 |
| 7.15 | Quartz crystal and its inductance | 647 |
| 7.16 | A pyroelectric radiation detector | 652 |
| 7.17 | Inonic polarization resonance in kcl | 538 |
| 7.18 | Low-k porous dielectrics for microelectronics | 669 |
| 8.1 | Ampere's law and the inductance of a toroidal coil | 693 |
| 8.2 | Magnetostatic energy per unit volume | 694 |
| 8.3 | Saturation magnetization in iron | 703 |
| 8.4 | Magnetic domain wall energy and thickness | 709 |
| 8.5 | Energy dissipated per unit volume and the hysteresis loop | 718 |
| 8.6 | An inductor with a ferrite core | 723 |
| 8.7 | (BH)max for a permanent magnet | 727 |
| 8.8 | Superconducting solenoids | 737 |
| 8.9 | Pauli spin paramagnetism of sodium | 742 |
| 9.1 | Relative permittivity and refractive index | 778 |
| 9.2 | GaAs dispersion relation | 783 |
| 9.3 | Sellmeier equation and diamond | 783 |
| 9.4 | Cauchy equation and diamond | 784 |
| 9.5 | Group velocity | 786 |
| 9.6 | Group and phase velocities | 786 |
| 9.7 | Optical fibers in communications | 791 |
| 9.8 | Reflection of light from a less dense medium (internal reflection) | 800 |
| 9.9 | Reflection at normal incidence. Internal and external reflection | 801 |
| 9.10 | Antireflection coatings on solar cells | 802 |
| 9.11 | Dielectric mirrors | 803 |
| 9.12 | Complex refractive index | 807 |
| 9.13 | Complex refractive index of InP | 808 |
| 9.14 | Free carrier absorption coefficent and conductivity | 808 |
| 9.15 | Complex refractive index and resonance absorption | 809 |
| 9.16 | Reststrahlen absorption | 812 |
| 9.17 | Fundamental absorption | 815 |
| 9.18 | Rayleigh scattering limit | 819 |
| 9.19 | Quartz half-wave plate | 835 |
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