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A
Accelerated failure tests, 177
Acceptors, 390, 461
Accumulation, 570
Accumulation region, 444
Activated state, 98
Activation energy, 98
Activator, 820, 841
excitation
, 822
Active device, defined, 570
Affinity, electron, 375, 386,462
Allotropy, 61-63, 102
transition
temperature, 61
Alloy, 178
ternary
, iii-v, 545
Amorphous semiconductors, 78-82, 458-461
bandgap, 460
extended states,
458, 462
localized states,
459, 463
mobility edge, 460
tail states, 460
Amorphous solids, 78-82, 98-99
Ampere's law, 693
Angular momentum, 269
intrinsic, 245-247
orbital, 232
potential energy, 249-250
total, 252-253
Anion, 6, 15, 99
Anisotropic magnetoresistance (AMR), 744-748, 762
Anisotropic magnetocrystalline, 706-708,
shape, 725, 763
Antibonding orbital, 286, 288
Antiferromagnetism, 699, 729
Antireflection coating, 570, 802-803
Arrhenius rate equation, 47
a-Si:H, 82, 459
Aspect ratio, 175
Atomic concentration, 55
Atomic magnetic moments, 687-688
Bohr magneton, 688, 759
unfilled subshells, 688
Atomic mass, 8
Aromic mass number, 8
Atomic mass units (amu), 8, 99
Atomic number, 4
effective
(Zeff), 240
Atomic packing factor (APF), 55, 99
Atomic structure, 3-8
orbital angular momentum quantum number, 4, 232, 270
principal quantum number, 4, 232, 270
shell, 4, 239
subshells, 4, 239
Atomic weight. See Atomic mass
Attenuation, 841
Attenuation coefficient, 841
Attenuation in optical fibers, 817-819
graph, 818
Rayleigh
scattering limit, 819
Avalanche breakdown, 502-504, 570
Avalanche effect, 503
Average free time (in electron drift), 117, See also Mean free time
Avogadro's number, 8, 25, 99
B
B versus H, 716-717
Balmer series, 278
Balmer-Rydberg formula, 245
Band theory of solids, 291-299
Bandgap (energy gap) Eg, 302, 355, 357, 375, 464
direct band gap, 430, 451
indirect band gap,430, 452
mobility gap, 460
narrowing and emitter injection efficiency, 576
temperature dependence, 467
Bardeen-Cooper-Schrieffer
photo, 731
theory, 739
Barkhausen effect, 715
Basis, 50, 95, 99
BCC (body centered cubic). See Crystal structure
BCS theory. See Barden-Cooper-Schrieffer
BCT (body centered tetragonal). See Crystal structure
Bednorz, J.George, 684
Beer-Lambert law, 428
Biaxial crystals, 828
negative, 828
positive, 828
Binary eutectic phase diagrams, 90-95
Bipolar junction transistor, 475, 506-522, 570
a, 509-510
active region, 511
amplifier, CB, 515-517
b, 510, 512
base, 506
base transport factor,
aT, 509-510
base-width modulation,
512, 570. See also Early effect
collector, 506
collector junction,
507, 570
common base (CB)
configuration, 506-517
commonemitter (CE) DC characteristics, 517-518
current gain
a, CB, 509-510
current transfer ratio
a, 509, 514
emitter, 506
emitter
injection efficiency, 513-514, 575
emitter junction, 507
, 571
emitter current, 509
equations pnp
BJT, 574-575
input resistance, 516, 519
power gain, 509
saturated operating
region, 518
small signal equivalent
circuit, 572
small signallow-frequency
model, 518-522
transconductance, 520
transistor action, 509
transit time,
minority carrier, 510
voltage gain, 516, 520
Birefrigence, See also Retarding plates
circular, 835-837
crystals, 827, 841
of calcite, 832-833
of calcite
crystal, photo, 828
BJT. See Bipolar junction transistor
Blackbody radiation, 201-205
Planck's formula, 203
Rayleigh-Jeans law, 203
Stefan's black body radiation law, 203
Wien's law, 277
Black's equation, 177, 178
Bloch wall, 706, 708-711, 759
potential energy, 710
thickness, 710
Bloch wavefunctions, 450, 461, 462
Bohr magneton, 280, 688, 759
Bohr model, 3
Bohr radius, 233, 239
Bohr's correspondence principle, 217
Boltzmann constant, 28
Boltzmann energy distribution, 39
Boltzmann factor, 38
Boltzmann statistics, 312-313, 363, 479, 661
Bond, general, 9-25
energy, 11, 99
length, 10
polar, 22
primary, 9-18, 102
relative angle, 78
secondary 18-22, 102
switching, 155
twisting, 79
Bonding and types of solids, 9-25
Bonding (binding) energy, 11, 99,
Bonding orbital, 286, 288
Boson particle, 740
Bound charges, 589
Boundary conditions
dielectrics, 614-620, 670
electric field, 794
quantum mechanics, 210
Bragg diffraction condition, 194, 269, 356, 848-852
Bragg angle, 849
diffracted beam, 848
diffraction angle, 849
for cubic crystals, 851
Bragg distributed reflector, 568
Bragg's law. See Bragg diffraction condition
Brass, 178, 182
Bravais lattices, 95-98
unit cell geometry, 56, 97
Bronze, 178
Brewster's angle, 796, 841
Brillouin zones, 355, 357-361
Buckminsterfullerene. See Carbon
Built-in field, 570
Built-in potential, 421-422, 478-480
Built-in voltage, 570
Bulk modulus, 99
C
Capacitance
definition, 584
per unit volume, 634
temperature coefficient
(TCC), 636
volume efficiency, 634
Capacitor
constructions, 631-634
dielectric materials, 631
dielectrics table, 635, 678
electrolytic, 633
equivalent circuits
for parallel and series, 676
polyester (PET), 636, 677
polymeric film, 632
tantalum, 634
temperature coefficient, 363
types compared, 631, 635, 678
Carbon, 61-63
amorphous, 63
Buckminsterfullerene, 61-62
diamond, 61, 62
graphite, 61, 62
lonsdaleite, 62
properties (table), 63
Carbon nanotube (CNT), 63, 336, 370
field enhancement factor, 370
Carrier concentration
majority carrier, 410
minority carrier, 410
of extrinsic semiconductor
, 388-392
of intrinsic semiconductor
, 380-387
saturation temperature, 397
temperature dependence of, 396-401
extrinsic range, 398
intrinsic range, 398
ionization range, 397
Cathode, 363
Cathodoluminescence, 335, 820, 843
Cation, 6, 15, 99
Cauchy coefficients (table), 782
Cauchy dispersion equation, 783, 784
CB. See Conduction band
Ceramic, magnets, 726
Chemisorption, 74
Chip (integrated circuit), 570
Circular birefrigence, 835-837, 841
media, 836
optical activity, 835
specific rotary power
, 836, 844
Cladding, 791
Clausius-Mossotti equation, 593-594, 602-670
Coaxial cable failure, 628-631
thermal breakdown, 678-679
Coercive field (coercivity), 715, 759
Cohesive energy, 17
Cole-Cole plots, 611-614
Collimated beam, 36
Common base (CB) BJT configuration. See Bipolar junction transistor
Compensated semiconductor, 461
Compensation doping, 392-396, 461, 465
Complementary principle, 269
Complex dielectric constant, 605-611, 804-811
loss angle, 610
Loss tangent, 607
relaxation peak, 607
Complex propagation constant, 805, 842
Complex refractive index, 804-811, 842, 845-847
extinction coefficient
, 805, 842
for a-Si, 806
of InP, 808
resonance absorption
, 809-811
Complex relative permittivity. See Complex dielectric constant
Compton effect, 269
Compton scattering, 199-202
Conduction, 112-122, 416-422
in metals, 318-320
in semiconductors, 378-380
in silver, 319
Conduction band (CB) 302, 374-378, 461
Conduction electron concentration, 115, 148
Conduction electrons, 115, 155, 181, 299
Conduction in solids
electrical, 113-148
thermal, 149-154
in thin films, 166-167
Conductivity
activation energy for, 161
electrical, 178, 180-181
of extrinsic semiconductor
, 389
of Fermi level electrons in
metal, 318
of intrinsic semiconductor
, 380
of ionic crystals and glasses
, 159-162
lattice-scattering-limited
, 124
of metals, 114, 350-352, 367
of nonmetals, 154-162
of semiconductors, 155-159
temperature dependence of
, 122-125, 404-406
Conductivity-mixture rule, 140
Contact potential, 320-322
Continuity equation, 422-427
steady state, 424-427
time-dependant, 422-423
Continuous random network (CRN) model, 79
Cooper pairs, 740, 759
Coordination number (CN) 12, 17
definition, 99
Core, 791
Corona discharge, 622, 670
Covalent bond, 99
Covalent solids, 595-596
Covalently bonded solids, 11-13
Critical angle, 842
Critical electric field, 571
Crystal, 99
Crystal directions and planes, 56-61, 110
Crystal lattice, 49-63
different types,97
Crystal structure, 50
Crystal periodicity, 49
strained around a point defect
, 66
body-centered cubic (BCC)
, 51, 97, 109
body-centered tetragonal (BCT)
, 97, 98
close-packed, 13, 51
CsCl, 54
diamond cubic, 52, 109
face-centered cubic (FCC)
, 14, 50, 55, 97, 100
diffraction pattern (figure), 852
hexagonal close-packed (HCP)
, 51
NaCl, 51-53
polymorphic, 61
properties (table), 54
study using x-ray diffracion
, 849-852
Laue technique, 850
powder technique, 851
types, 49-56, 97
zinc blende (ZnS), 53, 109
Crystal surface, 73-76
absorption, 74
adsorption, 74
chemisorption, 74
dangling bonds, 74, 81
Kossel model, 74
passivating layer, 74
physisorption (physical adsorption), 74
reconstructed, 74
terrace-ledge-kink model
, 74
Crystal symmetry, 98
Crystal systems, 98
Crystal types, 49-56
Crystalline defects, 64-76
Crystalline solid, 49
Crystalline state, 49-63
Crystallization, 99
from melt, 70
nuclei, 70
Cubic crystals, 97
interplanar separarion, 851
Cubic symmetry, 50
Curie temperature, 648, 650, 670, 703-704
tabel, 704
Curie-Weiss law, 697
Current in plane (CIP), 747
Czochralski growth, 76-77
D
Dangling bonds, 81
De Broglie relationship, 205-207, 269
Debye equations, 611-614, 670
non-Debye relaxation, 614
Debye loss peak, 612
Debye heat capacity, 342-348
Debye frequency, 344, 363
Debye temperature, 344, 363
tabel, 346
Defect structures, 75-76
Deformation, plastic (permanent), 69
Degeneracy, 230
three-fold, 230
Degenerate semiconductor, 406, 461
Degree of freedom, 28
Delocalized electrons, 13
electron cloud or gas, 13, 295
Demagnetization, 717-719
Density of states, 305-311, 315-316, 363, 380-382, 429
effective density at CB edge, 382, 461
effective density at VB edge, 382
Density of vibrational states, 364
Deperming. See Demagnetization
Depletion capacitance, 498-499, 564
Depletion region. See pn junction
Depolarizing field, 657-658
depolarizing factor, 657
Diamagnetism, 696-698
deperming, 718
Dichroism, 833
Dielectric breakdown, 620-631
aging effects, 621
breakdown mechanisms compared
, 628
in coaxial cables, 628-631, 678-679
electrical tree, 626
electrofracture, 624-625, 671
electromechanical, 624-625, 671
electron avalanche breakdown
, 623
electronic, 623-624, 671
external discharges, 627-628, 671
in gases, 621-622
internal discharges, 625-626
, 671
intrinsic, 623-624, 671
in liquids, 622-623
loss, 603-611
partial discharge, 621-622
, 672
in solids, 623-631
surface tracking, 628, 671, 672
table, 621
Dielectric breakdown-Cont.
thermal, 624, 673
water treeing, 627
Dielectric materials, 583-683
constant. See
Relative permitivity
definition, 670
dispersion relation, 666
loss, 603-611, 670
loss table, 611
low -k, 175
properties (table), 678
strength, 584, 620-621, 670.
See also Dielectric breakdown
strength table, 621
volume efficiency, 634
Dielectric mirrors, 803, 842
Dielectric mixtures, 667-669
effective dielectric constant
, 667
Lichtenecker formula, 668
logarithmic mixture rules, 668
Maxwell-Garnett formula, 669
Dielectric resonance, 607, 662-667, 670
frictional force, 663
Lorentz dipole oscillator
model, 664
natural angular frequency, 664
peak, 665
relaxation peak, 665
resonant angular frequency, 664
restoring force, 663
spring constant, 663
Diffraction, 269, 848-852. See also Bragg diffraction condition
angle, 849
beam, 848
patterns (figure), 193, 852
study of crystal structure, 352-361, 849-852
Diffractrometer, 851
Diffusion, 46-49, 99 416-422, 461, 571
coefficient, 48, 99, 420
current, 484
current density, 416, 418
diffusion length, 424, 427, 483
mean free path, 416-417
Diffusion capacitance, 500-502, 571
diode action, 501
dynamic conductance, 501
dynamic (incremental) resistance, 500, 571
Diffusion coefficient, 420
Diode. See pn Junction
action, 501
equation, 488
laser, 266-269
long, 572
photodiodes, 564-566
short, 486, 572
Dipolar (orientational) polarization, 598-600, 660-662, 670
Langevin function, 661-662
relaxation equation, 670
relaxation process, 604-670
relaxation time, 604
Dipole moment. See Electric dipole moment; Magnetic dipole moment
Dipole relaxation, 604-607, 670
Dipole-dipole interaction, 20-21
Dirac, Paul Adrien Maurice, 314
Direct recombination capture coefficient, 469
Dislocations, 68-70, 99
edge, 68, 99
screw, 69, 102
Dispersion relation, 364, 666, 842. See also Refractive index
Dispersive medium, 785, 842
Domains. See Ferromagnetism
Donors, 389, 461
Doping, 388-396
compensation, 392-394
n- type, 384, 388-390
p- type, 384, 390-392
Doppler effect, 265, 269
Double-heterostructure (DH) device, 547
Drift mobility, 117, 401-404
definition, 178
due to ionic conduction, 162
effective, 127, 403
impurity dependence, 401-404
impurity-scattering-limited
, 127, 402, 463
tables, 146, 386
temperature dependence, 401-404
Drift velocity, 114, 118, 121, 157, 178, 379
Drude model, 114-122, 319
Dulong-Petit rule, 30, 344
Dynamic (incremental) resistance, 500-502, 571
E
Early effect, 512, 570
Early voltage, 538
Eddy currents and losses, 760, 766
Effiective mass, 303-305, 364, 379, 453, 462
EHP. See Electron-hole pairs
Eigenenergy, 214
Eigenfunction, 210
Einstein relation, 188, 419, 462
E-k diagrams, 448-452
Elastic modulus, 24-25, 100
Electric dipole moment, 19, 100, 583, 585-589, 670
definition, 19, 100, 670
induced, 30, 586, 779-780
in nonuniform electric field
, 674-675
permanent, 15, 19, 598
relaxation time, 604
Electric displacement, 654-658
depolarizing factor, 657
depolarizing field, 657
Electric susceptibility, 591, 671
Electrical conductivity, 178, 180-181
Electrical contacts, 143-144
Electrical noise, 42-45, 108. See also Noise
Johnson resitor noise equation, 44
rms noise voltage, 44
Electrochemical potential, 321
Electrodeposition, 167
Electroluminescence, 544, 820, 843
injection, 823
Electromechanical coupling factor, 642
Electromigration, 172
accelerated failure tests, 177
of Al-Cu interconnects, 189
barrier, 177
definition, 178
hillock, 177
mean time to 50 percent failure
, 177
rate, 177
void, 177
Electomigration and Black's equation, 176-177
Electron
average energy in CB, 385, 463
average energy in metal
, 317, 363
concentration in CB, 382, 388-390, 392
conduction electrons, 115, 155, 181, 299
confined, 212-217
crystal momentum 451, 454, 813-814
current due to, 419
diffraction in crystals, 352-361
diffraction patterns, 206
diffusion current density, 418
effective mass, 303-305, 364, 379, 453-455, 462
effective speed in metals, 317
energy in hydrogenic atom,236-241
energy in metals, 317
Fermi-Dirac statistics, 123
gas, 295
group velocity, 454
magnetic dipole moment, 248-252
mean recombination time (pn junction), 487
mobility, 379
momentum, 214
motion and drift, 452-453
in a potential box, 228-230
spin, 245-247, 271
spin resonance (ESR)
, 280
standing wave, 353
surface scattering, 168-172
as a wave, 205-212, 352-354
wavefunction in hydrogenic atom
, 231-236
wavefunction in infinite PE well, 229
wavelength, 207
Electron affinity, 6, 100, 375, 436, 462
Electron beam deposition, 80, 167
Electron drift mobility. See Drift mobility
Electron spin resonance (ESR), 280
Electronegativity, 22, 100
Electron-hole pairs, 376-378
generation, 302, 376-378, 383
, 410-414
mean thermal generation time
, 490
recombination, 377-378, 412, 457-458
Electronic impurity, 546
Electronic (quantum) state, 234, 247
Electro-optic effects, 837-841, 842
field induced refractive index
, 838
Kerr effect, 838, 842
noncentrosymmetric crystals
, 838
Pockels effect, 838, 843
Electroresistivity, 431, 463
Energy bands, 291-295, 305-308
Energy density, 269, 695
Energy gap (Eg). See Bandgap
Energy, quatized, 214, 236-241
ground state energy, 215
in the crystals, 462
infinite potential well, 230
Energy versus crystal momentum plot. See E-k diagrams
Epitaxial layer, 544, 571
Equilibrium, 100
Equilibrium state, 41, 100
Eutectic composition, 93, 100
Eutectic phase diagrams, 90-95
Eutectic point, 91
Eutectic transformation, 92
Evanescent wave, 798
attenuation coefficient, 798
penetration depth, 799
Excess carrier concentration, 410, 462, 468-469
Exchange integral, 702
Exchange interaction, 700-703, 760
Excitation
activator, 822
host, 822
Excited atom, 6
Extended states, 458, 462
External quantum efficiency, 571
External reflection, 798, 801-802, 846
Extrinsic semiconductors, 388-396, 462, 464-465
F
Family of directions in a crystal, 58
Family of planes in a crystal, 59
Fermi energy, 294, 324, 317, 320-322, 362, 366, 435-436, 462
in intrinsic semiconductor, 384
in a metal, 315-317
table, 295
Fermi surface, 359
Fermi-Dirac statistics, 123, 312-315, 364
Ferrimagnetism, 700, 760
Ferrite antenna, 767-768
Ferrites, 723, 760, 767-768. See also Ferrimagnetism
Ferroelectric crystals, 647-653, 671
ferroelectric axis, 649
Ferromagnetism, 699, 760
closure domains, 706
domain wall energy, 709-711, 760, 764-765
domain wall motion, 712-713
domain walls, 706, 708-711, 760
domains, 699, 705-706, 761
electrostatic interaction energy, 701
energy band model, 742-744
magnetocrystalline anisotropy, 706-708
materials table, 704
ordering, 699
origin, 700-703
polycrystalline materials, 713-717
Fick's first law, 418
Field assisted tunneling probability, 334
Field effect transistor, 571. See JFET; MOSFET
Field emission, 332-337, 364
Field emission tip, 335
anode, 335
gate, 335
Spindt tip cathode, 335
Field enhancement factor, 370
Fluence
energy, 275
photon, 276
Fluorescnece, 820, 842
Flux, defined, 269
luminous, 853
of particles, 416
of photons, 198, 853
radiant, 853
Flux quantization, 758-759
Forward bias, 487-489. See also pn Junction
Fourier's law, 150, 178
Fowler-Nordheim
anode current, 335
equation, 334
field emission current, 370
Fraunhofer, 244-245
Free surface charge density, 592
Frenkel defect, 66, 100
Fresnel's equations, 793-803, 842
Fresnel's optical indicatrix, defined, 829-832, 843
extraordinary wave, 829
ordinary wave, 829
Frequency, resonant
antiresonant, 645
mechanical resonant, 645
natural angular frequency, 664
resonant angular frequency
, 664
Fuchs-Sondheimer equation, 170
G
GaAs, 52, 386, 466
Gas constant, 25
Gas pressure (kinetic theory), 27
Gauge factor, 434
Gauss's law, 614-620, 654-658, 671
Giant magnetoresistance (GMR), 744-748, 751, 760. See also Magetoresistance
table, 747
Glasses, 78-82. See also Amorphous solids
melt spinning, 79
GMR. See Gian magnetoresistance
Grain, 70, 100
disordered, 72
Grain coarsening (growth), 73
Ground state, 215, 269
energy, 215, 237
Group index, 784-787, 842
definition, 785
Group velocity, 364, 784-787
in medium, 785
in vacuum, 785
Gruneisen's model of thermal expansion, 361-363
Gruneisen's law, 362, 371
Gruneisen's parameter (table)
, 363
Gyromagnetic ratio, 687
H
Hall coefficient, 146, 178, 359
for ambipolar conduction, 158
for intrinsic Si, 158-159
Hall devices, 145-148
Hall effect, 145-148, 178, 185-186
in semiconductors, 156-159, 468
Hall field, 146
Hall mobility, 148
Hard disk storage, 750-752
magnetic bit tracks, 751
magnetoresistance sensor, 751
design, 768-769
neodymium-iron-boron, 727
rare earth cobalt, 726-727
single domain particles, 724, 761
table, 724
Harmonic oscillator, 337-342, 364
average energy, 343
energy, 338
potential energy of, 338
Schrodinger equation, 338
zero point energy, 339, 365
Heat, 41, 100
Heat capacity, 28, 100
Heat current, 153
Heat of fusion, 84
Heat, thermal fluctuation and noise, 40-45
noise in an RLC circuit, 44
rms noise voltage, 44
thermal equilibrium, 40
Heisendberg's uncertainty principle, 217-220, 269, 277
for energy and time, 219
for position and momentum, 218
Helium atom, 254-256
Helium-neon laser, 261-264
efficiency, 264
Herve-Vandamme relationship, 845
Heterogeneous media, 667-669
Lichtenecker formula, 668
lagarithmic mixture rules, 668
Maxwell-Garnett formula, 669
heterogeneous mixture (multiphase solid), 139-143, 178
Heterojunction, 547, 571
Heterostructure devices, 544, 547
confining layers, 548
double heterostructure, 547
Hexagonal crystals, 52, 97
HF resistance of conductor, 163-166
Hole, 155, 302, 373, 376-378, 455-456
concentration in VB, 382, 391-392
current due to, 419
diffusion current density, 418
diffusion length, 483
effective mass, 380, 456
mean recombination time (pn junction), 487
mobility, 380
Homogeneous mixture, 178-179
Homojunction, 547, 571
Host excitation, 822
Host matrix, 820, 843
Human eye, 273-275
photopic vision, 273
scotopic vision, 273
Hund's rule, 256-258, 269, 281
Hybrid orbital, 300
Hybridization, 300
Hydrogen bond, 19
Hydrogenated amorphous silicon. See a-Si:H
Hydrogenic atom, 231-253
electron wavefunctions, 231-236
line spectra, 278
Hysteresis loop, 715-719, 761
energy dissipated per unit volume, 718-719
loss, 761, 766
I
Image charges theorem, 332
Impact inonization, 503, 571
Impurities, 64-66
Incandescence, 820
Inductance, 163, 693-694
of a solenoid, 763
toroid, 694, 723, 765
Infinite potential well, 212-217
Insulation strength. See also Dielectric breakdown
aging, 627, 671
Integrated circuit (IC), 571
aspect ratio, 175
effective multilevel capacitance, 174
low-k dielectric materials, 175
multilevel interconnect delay time, 175
RC time constant, 173, 175-176
Interfacial polarization. See Polarization
Internal discharges. See Dielectric breakdown
Internal reflection, 796-797, 800-801, 846
Interplanar separation in cubic crystals, 851
Interstitial site, 45, 101
impurity, 66, 83-84
Intrinsic angular momentum. See Angular momentum; spin
Intrinsic concentration (ni), 383, 462, 485
Intrinsic semiconductors, 374-387, 462
Inversion, 532-535, 571. See also MOSFET
Ion implantation, 541-543, 571
Ionic conduction, 179
Ionic crystals, 17
Ionically bonded solids, 14-18, 104
table, 21
Ionization energy, 6, 15, 101, 237, 462
for n th shell, 237
of He+, 240
Irradiance, 787-789
average, 788, 842
instantaneous, 788, 842
Isolelectronic impurity, 546, 572
Isomorphous, 101
Isomorphous alloys, 83-88
Isomorphous phase diagram, 84, 179
Isotropic substance, 101
J
JFET, 522-532, 571
amplifier, 528-532, 577
channel, 523, 570
characteristics, 524, 528
common source amplifier, 529
constant current region, 528
current saturation region, 528
drain, 522
drain current, 523
field effect, 528
gate, 522
general principles, 522-528
nonlinearity, 532
pentode region, 528
pinch-off condition, 525-526
pinch-off voltage, 529
quiescent point, 529
source, 522
transconductance, 531
voltage gain, small-signal, 531
Johnson resistor noise equation, 44
Josephson effect, 756-758
dc charactersitics, 757
definition of 1 V, 758
Joule's law, 179
Junction field effect transistor. See JFET
K
k see Wavevector
Kamerlingh Onnes, Heike, 730
Kerr effect, 838, 842
coefficients,
table 840
Kilby, Jack, 474
Kinetic (molecular) theory, 25-36, 101
degree of
freedom, 28
equipartition of
energy theorem, 28
heat capacity, 28. See also Dulong-petit rules
mean kinetic
energy, 27-28
mean speed, 27,
30-31, 115
thermal
fluctuations, 40-45
Kossel model, 74
Kramers-Kroning relations, 806, 842-843
L
Lamellae, 93
Langevin function, 661-662
Lasers, 258-267, 269-270
cavity modes, 265
diode, 266-269
Doppler effect,
265
He-Ne laser, see
Helium-Laser laser
lasing emission, 261
linewidth, 265
long-lived states, 260
metastable state,
260
output spectrum,
265-267
population
inversion, 259
pump energy level, 260
pumping, 260, 270
semiconductor,
475, 566-569
single-frequency, 569
single-mode, 569
stimulated
emission, 259, 271
threshold current, 569
Lattice, 50, 95, 101. See also Bravais lattices
parameter, 44,
50, 87, 91
cut-off frequency, 340
energy, 18
parameter, 50, 56, 96, 101
space, 95
waves, 337-342, 347, 364
Lattice vibrations, 339-350
density of
states, 343, 363
heat capacity,
344
internal energy,
343
modes, 341-342,
364
state, 341, 364
Lattice-scattering-limited conductivity, 124
Laue technique, 850
Law of the junction, 482-483, 572
Lennard-Jones 6-12 potencial energy curve, 23
Lever rule, 144
Lichtenecker formula, 668
Light absorption, 804-811
and conductivity, 808
Light as wave, 191-194
Light emitting diodes (LEDs), 475, 543-551
characteristics,
548-551
electroluminescence, 544
external
efficiency, 546
heterojunction
high density, 547-548
linewidth, 549,
572, 579
materials, 546
principles,
543-546
spectral linewidths, 550-551, 579
substrate, 544
turn-on (cut-in)
voltage, 550-551, 579
Light propagation, 804-805
attenuated, 805
conduction loss,
805
lossless, 804
Light scattering, 804, 816-817, 844
Light waves, 774-776
Line defects, 68-70
strain field, 68
Linear combination of atomic orbitals (LCAO), 287, 364
Liquidus curve, 85
Local field, 593-594, 658-660, 671-672
Long range order, 49, 78
Lonsdaleite, 62
Lorentz dipole oscillator model, 664
Lorentz equation, 658-600
Lorentz field, 593-594
Lorentz force, 145, 179
Lorenz number, 150. See also Wiedemann-Franz-Lorenz
Loss angle, 610
Loss tangent (factor), 607, 672
Luminescence, 820-825
activator, 820, 842
activator excitation
, 822
cathodoluminescence,
820, 843
electroluminescence,
544, 820, 843
fluorescence, 820, 842
host excitation, 822
host matrix, 820, 843
phosphorescence,
821, 843
photoluminescence,
820, 843
radiative recombination center, 822
Stoke's shift, 822, 844
X-ray, 820
Luminescent (luminescence centers). See Activator
Luminous efficacy, 854
Luminous (photometric) flux or power, 270, 273, 853
lumens, 853
Lyman series, 278
M
Madleung constant, 17
Magnet, permanent, 768
table, 768
with yoke and air gap, 768-769
Magnetic bit tracks, 751
Magnetic dipole moment, 685-686, 761
atomic, 687-688
definition, 686
of electron, 248-252
orbital, 249, 687
per unit volume, 689
potential energy, 249-250
spin, 249, 687
Magnetic domains, See Ferromagnetism
Magnetic field (B), 179, 761, 787-789
in a gap, 771
intensity, 691-692
transverse, 793
Magnetic field intensity (strength) See Magnetizing
field
Magnetic induction. See Magnetic field
Magnetic materials classification, 696-700
amorphous, 722
soft and hard materials, 719-721
table, 697
Magnetic moment. See Magnetic dipole moment
Magnetic permeability, 179, 692-696, 761. See also Relative permeability
quantities table, 693
relative, 692, 762
Magnetic pressure, 769-770
Magnetic quantities and units, table, 693
Magnetic quantum number, 232, 270
Magnetic recording, 749-756
fringing magnetic field, 749, 771
general principles, 749-750, 770-771
hard disk storage, 750-752
head materials, 752-753
inductive recording heads, 749
longitudinal recording, 749
magnetic bit tracks, 751
materials tables, 754, 755
storage media, 753-756, 770-771
thin film heads, 752
Magnetic susceptibility, 692-696, 762
Magnetism and energy band diagrams, 740-744
Energy band model of ferromagnetism, 742-744
Pauli-Spin paramagnetism, 740-742
Magnetization current, 690, 762
Magnetization vector (M), 688-690, 762
and surface currents, 690, 762
Magnetization versus H, 713-717
coercivity, 715, 759
initial magnetization, 716
remanent (residual) 715, 762-763
saturation, 703-704, 717, 763
Magnetizing field (H), 691-692, 761
conduction current, 691
Magnetocrystalline anisotropy, 706-708, 762
easy direction, 706, 708, 760
energy, 708, 762
hard direction, 708, 761
Magnetometer, 179
Magnetoresistance, anisotropic and giant, 744-748, 762
current in plane (CIP), 747
ferromagnetic layer, 745
spacer, 745
spin valve, 747
Magnetostatic energy, 705, 762
density, 696
per unit volume, 694-696
Magnetostrictive energy, 711-712, 762
constant, 711
Majority carrier, 410, 463
Mass action law (semiconductors), 383, 463
with bandgap narrowing, 576
Mass fractions, 8-9, 88
Matthiessens's rule, 125-134, 179, 181
combined with Nordheim's rule, 137, 142-143
Maxwell's equations, 774
Maxwell-Boltzmann distribution function, 37-39
Maxwell's principle of equipartition of energy, 28, 42-43
Mayadas-Shatkez formula, 168
Mean free path
of electron, 122, 123, 179
in polycrystalline sample, 168
in thin film, 169
of gas molecules, 106-107
Mean free time, 117, 119, 121, 179
Mean frequency of collisions, 118
Mean kinetic energy and temperature, 25-31
Mean scattering time. See Mean free time
Mean speed of molecules, 39-40
Mean square free time, 121
Mean thermal expansion coefficient, 35
Mechanical work, 101
Meissner effect, 731, 762
Melt spinning, 79
Metallic bonding, 13, 101
Metallurgical junction (semiconductors), 476, 572
Metal-metal contacts, 320-322
Metal-oxide semiconductor (MOS), 532-535, 572. See also MOSFET
threshold voltage, 539-541, 573
Metal-oxide semiconductor field effect transistor. See MOSFET
Metals, band theory, 352-361
free electron model of, 315-317
quantum theory of, 315-320
Miller indices, 58-61, 101
Minority carrier, 410-416, 463
diffusion, 483
diffusion length, 463
excess concentration of, 410-416
injection, 407-416, 475, 481-483, 572
lifetime, 412, 463
profiles (hyperbolic), 574
recombination time, 412, 573
Miscibility, 101
Mixed bonding, 22-25
Mixture rules, 139-144, 184
Mobility. See Drift mobiltiy
Mode number, 265
Modern theory of solids, 285-371
Molar fractions, 8
Molar heat capacity, 28, 101, 343
Mole, 8, 101
Molecular orbital, 286
Molecular orbital theory of bonding, 285-290
hydrogenic molecule, 285-289
Molecular orbital wavefunction, 364
Molecular solids, 21
Molecular speeds, distribution (Stern-type experiment), 36
Molecular velocity and energy distribution, 36-40
Monoclinic crystals, 97
Moseley relation, 279
MOSFET, 532,-543, 572
accumulation, 570
amplifier, 577-578
depletion layer, 532-534, 571
early voltage, 538
enhancement, 535-539, 571
field effect and inversion, 532-535
inversion layer, 534
ion implanted, 541-543
MOST, 572
NMOS, 572
PMOS, 572
silicon gate technology, 542
threshold voltage, 539-541, 573
Moss's rule, 845
Motion of a diatomic molecule, 28-29
rotational, 28-29
translational, 28-29
Mott-Jones equations, 324
Muller, K.Alex, 684
Multilevel interconnect
delay time, 175
effective capacitance, 174
RC time constant, 175
N
Nanotube, carbon,63, 336, 370
Natural (resonance) frequency of an atom, 780, 846
Nearly free electron model, 449
Néel temperature, 699
Newton's second law, 25
Nichrome, 135
NMOS, See MOSFET
Nondegenerate semiconductor, 406-407, 463
Node, 215
Nonstoichiometry, 75-76
Noise, 40-45. See also Eelectrical noise
Nonstoichiometry, 75-76
Nordheim's coefficient, 136
table, 136
Nordheim's rule, 134-139, 179, 182
Normalization condition in quantum mechanics, 214
n-type doping, 388-390
energy-band
diagram, 389
Nucleate (solidfy), 84
O
Ohm's law of electrical conduction, 118, 150
Ohmic contacts, 443-448, 463
Optic axis, 829-830, 843
principal, 827-828, 843
Optical absorption, 437-431, 804-811, 841
absorption coefficient, 428, 813
band-to-band (interband), 429, 813-16
and conductivity, 808
free carrier, 805, 847
lattice, 811-812
penetration depth, 429, 813
Reststrahen absorption, 811
upper cut-off wavelength, 813
Optical activity, 835, 843
spedific rotary power, 836
Optical amplifiers, 267
Optical anisotropy, 827-833, 841
Optical fiber, 791, 817-819
attenuation in, 817-819
cladding, 791
in communciations, 791-791
core, 791
Optical fiber amplifiers, 267-268
Erbium (Er3+ ion) doped, 267, 282
long-lived energy level, 267
Optical field, 774
Optical indicatrix. See Fresnel's optical indicatrix
Optical power. See Radiant, power
Optical properties of materials, 773-847
Optical pumping, 260, 270
Optically isotropic, media, 778
crystals, 827
Orbital, 234, 270, 364
magnetic moment, 249
Orbital wavefunction, 270, 364
Oriental polarization. See Dipolar polarization
Orthorombic crystals, 97
P
Parallel rule of mixtures, 140
Paramagnetism, 698, 762
Pauli spin, 740-742, 764
Parity, 261
even, 216
odd, 216
Partial discharge, 618, 621-622, 672
Partial flux, 416-420
Particle statistics. See Statistics
Paschen
curves, 677
series, 278
Passivated Emitter Rear Locally diffused
cells (PERL), 561-562
Passive device, defined, 572
Pauli exclusion principle, 115, 254-256, 270, 312-313, 701
Pauli spin magnetization, 698, 740-742, 764
Pauli scale of electronegativity, 22
PECVD. See Plasma-enhanced chemical vapor deposition
Peltier, coefficient, 447-448
device, 444
effect, 445
figure of merit (FOM), 471-472
maximum cooling rate, 472
Penetration depth, 429, 813
Periodic array of points in space. See
Crystal structure
PERL. See See Passivated Emitter Rear
Locally diffused cells
Permanent magnet, (BH)max, 727-729
Permeability, absolute, 692. See also
Magnetic permeability; Relative
permeability
initial, 720-721, 761
maximum, 720-721, 762
relative, 692, 762
Permittivity. See Relative permittivity
Phase, 83, 101, 179
cored structure, 87
diagrams, 84-88, 101
equlibrium, 87
eutectic, 90-95
lever rule, 87
liquidus curve, 85
nonequlibrium cooling, 87
solidus curve, 85
tie line, 88
Phonons, 337-352, 364, 409, 463, 815
dispersion relation, 340, 364
energy, 340
group velocity, 341
lattice cut-off frequency, 340
momentum, 340, 815
phosphors, 820-825, 843
table, 824
Phosphorescence, 821, 843
Photoconductivity, 414-416, 463
Photodetectors, 475
Photodiodes, 564-566
Photoelectric effect, 194-199, 270, 276
Photogeneration, 376, 410-412, 463
carrier kinetic energy, 473
steady state rate, 469
Photoinjection, 463
Photometric fulx. See Luminous flux or power
Photometry, 853
Photon, 191-205, 270, 272
efficiency, quantum, 276
energy, 196, 200
flux, 198, 853
momentum, 199, 200
picture, 198
Photon amplification, 258-261
Photovoltaic devices, principles, 551-559.
See alse Solar cell
Photoresponse time, 413-414
Physical vapor deposition (PVD), 167
Physisorption, 74
Piezoelectric
antiresonant frequency, 645
bender, 680
coefficients, 641, 681
detectors, 681
electromechanical coupling factor, 642
inductance, 646
materials, 672
mechanical resonant frequency, 645
poling, 643, 672
properties table, 642
quartz oscillators and filters, 664-647
spark generator, 643-644
transducer, 641, 673
voltage coefficient, 644, 680
Piezoresistive strain guage, 434-435
Piezoresistivity, 431-435, 463, 470
Cantilever equations, 470
diaphragm, 434
piezoresistiv coefficient, 433, 463
pin Diodes, 564-566
depletion layer capacitance, 564
Pinch-off, 524-528
Planar concentration of atoms, 60, 101, 109-110
Planar defects, 70-73
Planck, Max, 203
constant, 196
Plane of incidence, 793
Plasma-enhanced chemical vapor deposition (PECVD), 82
PLZT, 672
PMOS. See MOSFET
pn Junction, 476-493
band diagram, 494-498
built in potential, 478-480
depletion capacitance, 498-499, 571
depletion region, 477, 571
depletion region width, 479, 498
diffusion capacitance, 500-502
diffusion current, 481-487
forward bias, 481-487, 571
hetrojunction, 547
homojunction, 547
ideal diode equation, 485
ideality factor, 488
incremental resistance, 500-502
I-V characteristics, 497
I-V for Ge, Si and GAAs, 486, 489
no bias, 476-481
recombination current, 488, 573
reverse bias, 489-493
reverse saturation current, 485, 490, 572
short diode, 486
space charge layer (SCL), 477, 571
storage capacitance. See Diffusion capacitance
temperature dependance, 574
total current, 487-489
total reverse current, 491
pn Junction band diagrams 494-498
built-in voltage from band diagrams, 498
forward and reverse bias, 495-498
open circuit, 494-495
Pockels cell phase modulator, 840, 847
Pockels effect, 838, 843
coefficients, table, 840
Point defects, 64-68
Frenkel, 66
impurities, 64-68
interstitial, 66
Schottky, 66
substitutional, 65
thermodynamic, 64
Poisson ratio, 186
Polar molecules, 19
Polarizability, 586, 588, 781. See Polarization
defined, 586, 672
dipolar (orientational), 662
table, 588
Polarization, 101, 583-603
charges, 591
definition, 585-586, 672
dipolar, 598-600, 660-662, 670
electronic, 585-589, 595-596, 671, 781
electronic bond, 671
induced, 586, 664, 671
interfacial, 600-601
ionic, 597-598, 602, 662-667, 671, 811
mechanisms, 597-603
orientational. See Polarization, dipolar
relaxation peak, 665
table, 602
total, 601-603
vector, 589-593, 672
Polarization angle. See Brewster's angle
Polarization modulator, 841
halfwave voltage, 841
Polarization of EM wave, 796, 825-827, 843
circular, 826, 841
elliptical, 827
liner, 796, 825
plane, 825
Plarized molecule, 20
Poling, 643, 672
Polycrystalline films and grain boundary
scattering, 167-168
Polymorphism, 61, 102
Polysilicon gate (poly-Si), 541-543, 572
Population inversion, 29, 270. See also Lasers
Powder technique, 851
Poynting vector, 787-789, 843
Primary a, 94
Primary bonds, 18
Principal optic axis, 827-828
Principal refractive index, 827
Probability. See Statistics
Probability of electron scattering, 119
Probability per unit energy, 39
Proeutectic (primary a), 94
Properties of electrons in a band, 296-299
Property, definition, 102
p-type doping, 390-392
energy-band diagram, 391
Pumping, 260, 270
PV work, 101
Pyroelectric, crystals, 647-653
coefficients, 650
current density, 652
current responsivity, 652
detector, 651-652, 681-682
electric time constant, 682
material, 672
table, 650
thermal time constant, 682
voltage responsivity, 652
PZT, 672, 681
Q
Q-factor, 672
Quantization
of angular
momentum, 241-245
of energy,
230, 236-241
space, 208-213
Quantum leak; see Tunneling
Quantum numbers, 214, 232
magnetic, 232,
241, 270
orbital angular
momentum, 232, 241-245, 270
principal, 232,
270
quantum state,
234
spin magnetic,
246, 271
Quantum physics, 191-283
harmonic oscillator, 337-342
tunneling, 221-228, 271,
278
Quartz oscillators and filter, 644-647
Quartz crysta
equivalent circuit, 646
inductance, 647
Quiescent point, 529
R
Radial function, 233-236
Radial probability density, 233
function, 236
Radiant, 270
flux, 269, 271, 853
power, 271
Radiant emittance, 203. See also Black-body radiation
Radiation, 271
brightness, 853-854
Radiative recombination center, 822
Radiometry, 853
flux in, 269, 853
Random motion, 416-422
Rare earth cobalt, magnets, 726
Rayleigh scattering, 816-817
Recombination, 383, 407-409, 457-458, 463, 469
capture coefficient, direct, 469
current, 487-489, 572
direct, 407-409, 469
indirect, 407-409, 457-458
lifetime, 469
mean recombination time, 412, 487
and minority carrier injection, 407-416
rate, 469
Reflectance, 799-803, 807, 843
infrared, 811
Reflection of light, 793-799
coefficient, 793-799, 807, 843
external, 797, 80-802, 846
at normal incidence, 796
phase changes, 795
Refracted light, 789-790, 843
phase changes, 795
transmission coefficients, 793-799, 844
Refractive index, 777-779, 844
complex, 804-811
definition, 777
dispersion relation, 773, 781-782, 842, 846
dispersion relation in diamond, 846
dispersion relation in GaAs, 783
field emission, 838
isotropic, 777
at low frequencies, 778
temperature coefficient, 845
versus wavelength, 779-784
Relative atomic mass. See Atomic mass
Relative permeability, 692, 762
Relative permittivity, 583, 584-585, 672, 673, 778, 781, 844
complex, 605, 670, 804
definition, 584, 672
effective, 667
loss angle, 610
real and imaginary, 605-614
table, 602, 610
Relaxation peak, 607
Relaxation process, 606
Relaxation time, 117, 179, 604, 672
Remanence. See under Magnetization
Remanent magnetization. See under Magnetization
Residual resistivity, 128, 179
Resistivity, effective, 140
Resistivity index (n), 132
Resistivity of metals (Table), 129
due to impurities, 138
graph, 130
Resistivity of mixtures and porous materials, 139-144
Resistivity of thin films, 167-172
Resistivity-mixture rule, 140, 142
Resonant frequency. See Frequency, resonant
Reststrahlen band, 811
Retarding plates, 833-835, 844, 847
half-wave retarder, 834
quarter-wave retarder, 835
quartz retarder, 835
relative phase shift, 834
retardation, defined, 834
Reverse bias, 489-493, 572. See also pn Junction
RF heating, 77
Rhombohedral crystal, 97
Richardson-Dushman equation, 328-332
Root mean square velocity, 40
Rydberg constant, 245
S
Saturated solution, 102
Saturation of magnetism, 703-704
Schottky defect, 66, 102
Schottky effect, 332-337
Schottky coefficient, 333
Schottky junction, 435-443, 464
built-in electric field, 437
built-in potential, 437
depletion region, 437
diode, 435-440
energy band diagram, 436, 438, 440
I-V characteristic, 438
Schottky barrier height, 437
Schottky junction equation, 440
solar cell, 440-443
space charge layer (SCL), 437
Schrodinger's equation, 208-212, 271
SCL. See Space charge layer
Screw dislocation, 69, 102
line, 69
Secondary bonding, 18-22, 102
Secondary emission, 368-369
Seebeck effect, 322-328, 364-365
in semiconductors, 472, 473
Mott and Jones equation, 324
Seebeck coefficient, 322-323
Seed, 77
Selection rules, 242-243, 271
Sellmeier coefficients, 782
Sellmeier equation, 782, 845
Semiconductor bonding, 299-302
Semiconductor devices, 475-581
ultimate limits to device performance, 578
Semiconductor optical amplufiers, 566-569
conduction band (CB), 302
degenerate and non-degenerate, 40-407
direct and indirect bandgap, 448-458
strain guage, 434-435
tables, 366, 386
valance band (VB), 301
Series rule of mixtures, 140
Shell model, 3
Shockley, William, 372, 473
Shockley equation, 485, 572
Short-range order, 79
Silicon, 80, 299-301, 374-380
amorphous, 80-82, 459. See also a-Si:H
conduction band, 302
crystalline, 0-82
energy band diagram, 374
hybrid orbitals, 300
hydrogenated amorphous silicon
(s-Si:H), 82, 459
properties (table), 674
valence band, 301
zone refining, 88-90
Silicon gate technology. See Polysilicon gate
Silicon single crystal grawth, 76-77
Skin depth for conduction, 163
Skin effect in inductor, 166
Skin effect: HF resistance of conductor, 163-166, 179
at 60 Hz, 188
Small signal equivalent circuit, 572
Snell's law, 790-792, 844
Soft magnetic materials, 721-724, 763
table, 722
Solar cell, 475, 551-563, 581
antireflection coating, 551, 802-803, 841, 846
fill factor, 558, 571
finger electrodes, 551
I-V characteristics, 556-557
load line, 557
materials, devices and efficiencies, 561-563
maximum power delivered, 580
normalized current and voltage, 580
open circuit voltage, 552, 558-559
operating point, 557
passivated emitter rear locally diffused
cells (PERL), 561-562
photocurrent, 553, 572
photovoltaic device principles, 551-559
power delivered to the load, 557
Schottky junction, 440-443
series resistance, 559-561, 581
short circuit current, 556
shunt (parallel) resistance, 559-561, 581
total current, 556
Solder (Pb-Sn), 90-95, 111
Solid solution and Nordheim's rule, 134-139, 182
Cu-Au, 137
Cu-Ni, 135
Solid solutions, 65, 83-95, 102, 179
interstitial, 84
isomorphous, 83
substitutional, 65
Solidification, nucleation, 70
Solidus curve, 85
Solute, 83, 102
Solvent, 83, 102
Solvous curve, 90
Sound velocity, 347
Space charge layer (SCL), 437, 477. See also pn Junction
Specific heat capacity, 31, 101
Spectral irradiance, 202
Spherical harmonic, 232
Spin, 245-247
of an electron (defined), 271
magnetic moment, 280
magnetic quantum number, 246
paired, 255
Stern-Gerlach experiment, 250
Spin-orbit coupling, 280-281
poetential energy, 281
Spontaneous emission, 259, 271
Sputtering, 167
SQUID, 731
State, electronic, 234, 247, 271, 365
ground, 215
stationary state, 210
Statistics, 312-315
Boltzmann classical statistics, 312-313, 363
Boltzmann tail, 315
Fermi-Dirac statistics, 123, 312-315, 364
of donor occupation, 390, 465
of dopant inoization, 400
Stefan-Boltzmann law. See Blackbody radiation
Stefan's black body radiation law, 179, 203-204
Stefan's constant, 203-204
Stimulated emission, 259, 271
Stoichiometry compounds, 75, 102
Stoichiometry, 75-76
Stoke's shift, 822, 844
Strain, 24, 102
shear strain, 102
volume strain, 102
Strain guage, 186
Stress, 24, 102
shear stress, 102
Strong force, 4
Substrate, 544, 572
Superconducting solenoid, 737-739, 771
Superconductivity, 685, 729-740, 763
critical current, 736-739, 769
critical magnetic field, 735, 760
critical surface, 737
critical temperature, 729, 760
high Tc materials, 731, 736
Meissner effect, 729-733, 762
Meissner state, 734
origin, 739-740
penetration depth, 734
table, 736
type I and II, 733-736, 763
vortex state, 735
weak link, 757
zero resistance, 729-733
Supercooled liquid, 78
Surface current, 690
Surface polarization charges, 589
density, 590
Surface scattering, 168
Surface tracking, 628, 672. See also Dielectric breakdown
T
Temperature coefficient of capacitance
(TCC), 672, 677
Temperature coeffecient of resistivity
(TCR or a), 125-134, 180, 182
definition, 128
metals (table), 129
Temperature dependence of resistivity in
pure metals, 122-125
Temperature of light bulb filament, 187
Ternary alloys, 545
Terrace-ledge-kink model. See Kossel model
Tetagonal crystals, 97
Thermal coefficient of linear expansion, 33, 102, 187
Thermal conduction, 149-154, 185
Thermal conductivity, 149-153, 180
Ag, 183
due to phonons, 348
graph (versus electrical conductivity), 150
of nonmetals, 348-350
table, 152
Thermal equilibrium, 40
Thermal equilibrium carrier concentration, 397, 464
Thermal evaporation, 167
Thermal expansion, 31-36, 102
Thermal expansion coefficient. See
Thermal coefficient of linear expansion
Thermal fluctuations, 40-45
Theraml generation, 376
Thermal generation current, 573-573
Thermal radiation, 202. See also Blackbody radiation
Thermal resistance, 153-154, 180, 185
Thermal velocity, 40, 387, 401, 464
Thermalization, 427
Thermally activated conductivity, 161, 179
Thermally actviated processes, 45-49, 161
activated state and activation energy, 46, 161
Arrhenius tupe behavious, 45
duffusion, 46
diffusion coefficient, 48
jump frequency, 47
root mean square displacement, 48
Thermionic emissin, 328-32, 365, 369
constant, 331
Thermocouple, 322-328
equation, 325, 327-328, 369
Thermoelectric emf, 325, 327
metals (table), 326
Thermoelectric power, 322-323
Thin film, 180, 188
Thin film head, 752
Thin metal films, 166-172
Threshold voltage, 539-541, 573
Toroid, 693-696, 765
Total internal reflection (TIR), 789-792, 797, 844
critical angle, 791, 842
phase change in, 797
Transducer. See Piezpelectric, transducer
Transistor action, defined, 509, 573. See also Bipolar junction transistor
Transition temperature, 61
Transmission coefficient, 844
Transmittance, 799-803, 844
Transverse electric field, 79
Transverse magnetic field, 793
Trapping, 409
Triclinic crystal system, 97
Tunneling, 221-228, 271, 278
field-assisted probability, 334
probability, 223
reflection coefficient, 223
scanning tunneling microscope, 223-227
transmission coefficient, 222-223
Two-phase alloy resistivity, 143-144
Ag-Ni, 143
Two-phase solids, 83-95
U
Unharmonic effect, 34
Unharmonic oscillations, 34
Unharmonicity, 34, 349
Uniaxial crystals, 828
Unipolar conductivity, 118
Unit cell, 50, 56, 97, 102
hexagonal, 52
Unpolarized light, 796
Upper cut-off (threshold) wavelength, 813
graph, 814
table, 813
V
Vacancy, 64-68, 102, 110
concentration in Al, 67-68
concentration in semiconductior, 67-68
Vacuum deposition, 106-107
Vacuum level (energy), 2922-295, 464
Vacuum tubes, 328-337
rectifier, 329
saturation current, 329
Valence band (VB), 301, 374-378, 464
Valence electrons, 5, 102
Valency of an atom, 5
van der Waals bond, 19-20
water (H2O), 20
van der Waals-London force, 19
Vapor deposition, 167. See also Physical vapor deposition
Varactor diodes, 499
Varshni equation, 467
VB. See Valence band
Velocity density (distribution) functionn, 37
Vibrational wave, 151
Virial theorem, 6, 7, 102-103
Vitreous silica, 78
Volume expansion, 35
Volume expansion coefficient, 35
Vortex state, 735
W
Wave, defined, 271-272
dispersion relation, 364, 666, 842
electromagnetic (EM), 191
energy densities in an EM, 787
equation, 272, 347
fields in EM, 787
group velocity, 341
incident, 793
lattice, 340
light waves, 774-776
longitudinal, 339
matter waves, 210
monochromatic plane EM, 774
phase, 774, 843
propagation constant, 774
reflected, 793
transverse, 339
traveling, 192, 774-775
ultrasonic, 641
vibrational, 151
Wavefront, 774, 844
Wavefunction, 208-210
antisymmetric, 216
defined, 272
eigenfunction, 210,br>
matter waves, 210
one-electron, 254
stationary states, 210
steady state total, 209
symmetric, 216
Wavenumber, 192, 774, 844. See also Wavevector
Wavepacket, 784, 844
Wavevector (k), defined, 192, 272, 776, 844
of electron, 272, 450-456
Weak injection, 425
Weight fractions, 8-9, 88
White LED, 820-825
Wiedemann-Franz-Lorenz's law, 150
Wien's displacement law, 205, 277
Work function, 196, 272, 295, 365, 434-437, 443, 464
effective, 333
of a semiconductor, 384
tabel, 295, 369, 470
X
X-rays, 193-194, 199-202, 272, 275-276
diffraction, 849-852
energy fluence, 275
photon fluence, 276
radiography, 275
roentgen, 275
Y
Young's double-slit experiment (figure), 193-205
Young's fringes, 192
Young's modulus, 102. See also Elastic modulus
Z
Zener breakdown, 502-506, 573
Zener effect, 505
Zener resistance, 729-733
Zero-point energy, 365
Zone refining, 88 - 90
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